Distinguished professor Kenneth Gonsalves gave a virtual invited seminar on March 2,2021 at Florida Institute of Technology Melbourne FL USA.
Link to abstract . Link to the Presentation.


SPIE Advanced Lithography-2021 CONFERENCE
"Development of metal-organic cluster based negative tone resist: pre-screened through the helium-ion beam prelude to extreme ultraviolet lithography (EUV) applications" Link to abstract . Link to the Presentation.


Dr Kenneth Gonsalves Distinguished Professor made an invited presentation at the 2020 EUV SUPPLIER SHOWCASE SPONSORED BY EUV ICUC AND EUVLITHO.COM.
Link to abstract SS9 . Link to the Presentation.


How India’s trying to indigenise chip fabrication technology
Link to the News.


Dr Kenneth Gonsalves presented an invited talk at the 2020 EUVL Workshop on June10th, Online program www.euvlitho.com, cosponsored by EUV Litho Inc Austin TX and CXRO LBNL Berkeley CA, USA.
Link to the Abstract . Link to the Presentation.


SPIE Advanced Lithography-2020 CONFERENCE 11323, Extreme Ultraviolet (EUV) Lithography XI, Inorganic Resists
"All new nickel based metal core organic cluster (MCOC) resist for N7+node patterning" [11326-3]


SPIE Advanced Lithography-2020,San Jose,California, USA, 26th Feb (2020)
Focusing on nanoparticles-based photomultiplier in n-CARs Link to the Poster.


ELENA CONFERENCE @IMEC LEUVEN BELGIUM Sept 4 to 6 (2019)
Advancement Towards Sub-15 nm Resists Patterning for High Volume Manufacturing of Semiconductor Industry Link to the Presentation.


C4DFED - 2019
Center For Design & Fabrication of Electronic Devices (C4DFED) Clean Room Facility Link to the Video.


Conference Proceeding Elena-2019
1. Photo-dynamic Study of Tin Based Hybrid n-CAR Resist for Next Generation EUVL. S. W. Cendron, G. K. Belmonte, G. P. Reddy, M. G. Moinuddin, J. Peter, C. A. S. Moura, G. Lando, S. K. Sharma, K. E. Gonsalves, D. E. Weibel

2. Evaluation of Tin (Sn) Hybrid Non-Chemically Amplified Resist (n-CAR) for Advanced Nanoscale Patterning. M. G. Moinuddin, P. G. Reddy, Satinder K. Sharma, S. Ghosh, C. P. Pradeep, and K. E. Gonsalves

3. Enhanced photosensitivity of novel photoresist embedded with metallic nanoparticles for Next-generation lithography. M.G. Moinuddin, Manoj Sahani, Shivani Sharma, M. Yogesh, Satinder K. Sharma, Subrata Ghosh, Chullikkatti P. Pradeep and Kenneth E. Gonsalves

4.Facile Synthesis of Nickel Metal Organic Cluster Photoresist for sub-10 nm node Lithography. Rudra Kumar, M.G. Moinuddin, Manvendra Chauhan, Jerome Peter, Satinder K. Sharma and Kenneth E. Gonsalves

Link to the Website.


Acceptance of US Patent - 2019
Photoacid generators and lithographic resists comprising the same.Kenneth E. Gonsalves and Mingxing Wang,04.06.2019, USA Patent 10310375


SSALDF - 2019
Summer School On Advanced Lithography and Device Fabrication:From basics to contemporary methods (ALDF) Link to the Website.


Acceptance of US Patent - 2019
Photoacid Generators and Lithographic Resists Comprising the Same. Kenneth E. Gonsalves, Application No. 14/219/495


C4DFED - 2018
Centre for Design and Fabrication of Electronics Devices (C4DFED) Link to the Website.


IWNEBD - 2018 News
Link to the News.

Link to the News.

Link to the News.


IWNEBD - 2018
International Workshop on Nano/Micro 2d-3d Fabrication, Manufacturing of Electronic – Biomedical Devices & Applications from 31 October – 2 November 2018 Link to the Website.


Accepted Manuscript
1. Polarization Dependence in the Carbon K-edge Photofragmentation of MAPDST Photoresist: an Experimental and Theoretical Study C. Moura, G. K. Belmonte, M. Segala, K. E. Gonsalves and D. E. Weibel; Manuscript accepted at ACS J Physical Chemistry. DOI:10.1021/acs.jpcc.8b07288. Prof K. E. Gonsalves in collaboration with Dept of Chemical Physics, Institute of Chemistry, UFRGS, Porto Alegre, Brazil Funded by CNPq, CAPES, LNL Brazil

2. Ferrocene Bearing Non-ionic Poly-aryl Tosylates: Synthesis, Characterization and Electron Beam Lithography Applications Pulikanti Guruprasad Reddy, M. G. Moinuddin, Aneesh M. Joseph, Santu Nandi, Subrata Ghosh, Chullikkattil P. Pradeep, Satinder K. Sharma, and Kenneth E. Gonsalves; Manuscript accepted at Journal of photopolymer science and technology.

3. Enhanced mechanical properties of the high-resolution EUVLpatterns of hybrid photoresists containing hexafluoroantimonate ” Pawan Kumar, Pulikanti Guruprasad Reddy, Satinder K. Sharma, Subrata Ghosh, Chullikkattil P. Pradeep, Kenneth E. Gonsalves. Manuscript accepted at Microelectronic Engineering Journal.


Publications
EUV photofragmentation study of hybridnonchemically amplified resists containing antimony as an absorption enhancer” Cleverson Alves da Silva Moura, Guilherme Kretzmann Belmonte, Pulikanti Guruprasad Reddy, Kenneth E. Gonsalves and Daniel Eduardo Weibel. The paper has been published curently in RSC advance journal


Proceedings of SPIE
1. Helium ion active hybrid non-chemically amplified resist (n-CAR) for sub-10 nm patterning applications. S. K. Sharma, P. G. Reddy, M. G. Moinuddin, S. Ghosh, C. P. Pradeep, et al.

2. Evaluation of high-resolution and sensitivity of n-CAR hybrid resist for sub-16nm or below technology node. S. K. Sharma, M. G. Moinuddin, P. G. Reddy, C. P. Pradeep, S. Ghosh, et al.


Invited Lectures
1. Prof. Kenneth E. Gonsalves delivered a plenary speech at SBPMat Brazil-MRS on “Extreme Ultraviolet (EUV) Next Generation Lithography: Noval Patterning materials- progress and challenges. 10th Sept. 2017 – 14th Sept 2017. Link

2. Prof. Kenneth E. Gonsalves gave an invited lecture on EUVL Resist Technology at “ Brazilian Center for Physical Research”. Link

3. Prof. Kenneth E. Gonsalves gave an invited lecture on VLSI Resist Technology at “ CEITECS.A’ Portoalegre/RS Brazil”. Link


New Articles
1. EUV photo-fragmentation and oxidation of a polyarylene - sulfonium resist: XPS and NEXAFS study. Guilherme Kretzmann Belmonte, Cleverson Alves da Silva Moura, Pulikanti Guruprasad Reddy, Kenneth E, Gonsalves and Daniel Eduardo Weibel, The article has been published currently in ''Journal of Photochemistry & Photobiology, A: Chemistry'' journal. DOI information: 10.1016/j.jphotochem.2018.06.005 (Joint publication with Dept of Chemistry Physical Chemistry Institute, UFRGS, Porto Alegre, Brazil. Project work performed at LNLS Campinas Brazil)