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  • 1) Fig 1.The Ni-MOC resist patterns by HIBL.

  • 2) Fig 2.The Ni-DMA resist patterns by HIBL.

  • 3) Fig 3.10 nm Patterns of metal organic ensemble .

  • 4) Fig 4. 11 nm Patterns of metal organic ensemble .

  • 5)~10 nm patterns of MAPDSA-co-ADSM resist by HIBL.

  • 6) Fig 6. Imager of He+ exposed n-Car.

  • 7)Fig 7. 10 nm line patterns by HIBL.

  • 8)20 nm lines of 2.0%-MAPDSA-co-MAPDST resist.

  • 9) Fig 9 Photodynamic_1.

  • 10) Fig 10 Photodynamic_2.

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Resist Technology for VLSI application:

In today's world, semiconductor chips play a vital role in day to day life by making our life pleasurable, safer, and healthier. The radical improvements in integrated circuits (IC) performance stem primarily from the interconnection of millions of active and passive components such as logic, memory, input-output and power management modules on a single silicon chip. Semiconductor device manufacturers compete to offer cost effective devices that combine high performance and functionalities with low heat generation. This competition has resulted in a relentless drive to reduce the (IC) chip feature size to the sub N7 nm node. Reducing the device feature size boosts speed and improves the economics of manufacturing by allowing more transistors (often more than 50 million) to be placed on a single chip.

Read More ... Four faculties from different disciplines including science and engineering have teamed up and joined their hands together to take the challenges for the development of indigenous Photoresists, for dfferent lithography applications. The team is also working towards the commercialization of some of their newly developed Photoresist formulations for semiconductor industries.

These advanced resist technologies promote chip fabrication by cutting edge extreme ultraviolet lithography(EUVL) for smart cell phones, 5G, AI, IoT, cloud computing, autonomy, robotics, etc. The applications of these are diverse from aerospace to medical as well as consumer conveniences.